Applications
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Conventional and Wide Bandgap Semiconductors
Sub-surface damage and cleanliness are two critical manufacturing challenges in semiconductor manufacturing two critical challenges for semiconductor manufacturing. For example, conventional backside grinding for device thinning cannot go much below 150 microns due to the propagation of damage into the device. Plasma treatment has been shown not only to allow for thinning of devices down to 50 microns and below, but plasma treatment also restores the strength of the thinned die. Unlike other plasma treatment technologies, RAP can be localized and directed to treat specific areas of damage on a die or a wafer. Likewise, RAP can be used for localized cleaning of a wafer or in-process device when blanket plasma cleaning is either unsuitable or problematic.
Wide bandgap semiconductor devices made from silicon carbide are dramatically improving the energy efficiency of lighting, power electronics, and telecommunications. However SiC is a challenging material to process. RAPT Industries is demonstrating some remarkable advantages of its RAP process to the manufacture of SiC wafers and devices. Watch this space for more details!
For inquiries about RAP’s application to semiconductor device manufacturing, contact us at sales@raptindustries.com |
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